Bi2Sn2O7掺杂对Ag/SnO2材料界面润湿性及物理性能的影响

Effect of Bi2Sn2O7 doping on interfacial wettability and physical properties of Ag/SnO2 materials

摘要:

以化学共沉淀法合成的锡酸铋（Bi2Sn2O7）为改性组元，采用座滴法研究了Bi2Sn2O7掺杂对Ag/SnO2界面润湿角的影响规律，并利用机械合金化技术结合成型烧结工艺制备了Ag/SnO2(x)-Bi2Sn2O7(y)电接触材料。采用扫描电镜、X射线衍射仪、视频光学接触角测量仪、电阻测试仪、硬度计以及密度计等表征手段对材料的物相结构、电学及力学性能进行了表征。结果表明：所合成的Bi2Sn2O7粉体呈无规则颗粒状，尺寸在1-10μm之间。Bi2Sn2O7掺杂能明显改善Ag与SnO2之间界面润湿性，并且在Bi2Sn2O7与SnO2质量比在2：10时润湿角最小为82°。Ag与SnO2之间的润湿角越小，Ag/SnO2(x)-Bi2Sn2O7(y)电接触材料的电阻率越低，尤其在锡酸铋掺杂量为2wt.%时电阻率达到最低值，为2.28μΩ·cm，致密度和硬度达到最大值，分别为96.96%和90.0 HV0.3。

Abstract:

Bismuth stannate (Bi2Sn2O7) synthesized by chemical coprecipitation was used as modified component. The effect of Bi2Sn2O7 doping on the wetting angle of Ag/SnO2 interface was studied by the sessile drop method. The Ag/SnO2(x)-Bi2Sn2O7(y) electrical contact materials were prepared by mechanical alloying technique combined with molding sintering process. The phase structure, electrical and mechanical properties of the materials were characterized by SEM, XRD, OCA, resistance tester, hardness tester and densimeter. The results showed that Bi2Sn2O7 doping can significantly improve the interfacial wettability between Ag and SnO2, and the minimum wetting angle is 82 ° when the mass ratio of Bi2Sn2O7 to SnO2 was 2:10. The lower resistivity of Ag/SnO2(x)-Bi2Sn2O7(y) electrical contact materials were achieved with a decreased wetting angle between Ag and SnO2. Especially when the content of Bi2Sn2O7 is 2wt.%, the resistivity reaches the lowest value2.28 (μΩ·cm), and the relative density (96.96%)and hardness(90.0 HV0.3) reach the maximum value.