低能氩离子束对铍的刻蚀

Etching of Low Energy Argon Ion Beam on Beryllium

摘要:

研究了0~1000 eV的低能氩（Ar）离子束对Be的刻蚀。比较了多种不同的表面抛光方法，结果发现Ar离子束刻蚀能获得高质量的Be表面。随着刻蚀的持续进行，Be表面质量逐渐提升，表面粗糙度在600 eV和100 mA的条件下刻蚀6 h后趋于稳定，达到了0.63 μm。比较了白光干涉（WLI）和聚焦离子束（FIB）的测量方法，发现FIB测量法更适合Be刻蚀深度的测量。实验结果和理论计算表明，Be的溅射过程与其被Ar离子轰击后的电离过程较为接近。采用第一电离能作为溅射阈值，获得了Ar离子能量对Be溅射产额的影响规律，获得了Be刻蚀速率随Ar离子束流和溅射产额乘积的变化规律，为Be刻蚀的工程应用奠定了基础。

Abstract:

The etching of low energy argon (Ar) ion beam of 0–1000 eV on Be was investigated. Different surface polishing methods were compared. Results show that the high-quality Be surface can be obtained by Ar ion beam etching. With the etching proceeding, the Be surface quality is gradually improved, and the surface roughness becomes stable, reaching 0.63 μm after etching at 600 eV and 100 mA for 6 h. White light interferometer (WLI) and focused ion beam (FIB) measurement methods were compared. Results show that FIB measurement method is more suitable for measurement of Be etching thickness. The experiment results and theoretical calculations suggest that the Be sputtering process is similar to the ionization process of Be by Ar ion bombardment. The influence law of Ar ion energy on sputtering yield of Be can be obtained with the first ionization energy as the sputtering threshold, and the variation of Be etching rate with the product of Ar ion beam energy and sputtering yield is obtained, providing foundation for engineering application of Be etching.