可用于红外隐身的多功能Sn0.84Sb0.08Sm0.08O2/TPU复合微纳米纤维薄膜

Multifunctional Sn0.84Sb0.08Sm0.08O2/TPU Composite Micro/Nano-Fiber Film for Infrared Stealth

摘要:

以自制的中空多孔微纳纤维结构Sn_0.84Sb_0.08Sm_0.08O₂和热塑性聚氨酯（TPU）为原料，利用静电纺丝法制备Sn_0.84Sb_0.08Sm_0.08O₂/TPU（Sn_0.84Sb_0.08Sm_0.08O₂添加质量分数为0%、3%、6%和9%）复合微纳米纤维薄膜。结果表明：复合薄膜的微观形貌均呈现纤维状三维网络结构；复合薄膜的抗拉伸强度和伸长率随着添加量的增加均呈现先增强后减弱的趋势，当添加量为6%时，薄膜的抗拉伸强度为2.68 MPa，伸长率为573%，是TPU薄膜的1.5和8.3倍。Sn_0.84Sb_0.08Sm_0.08O₂的添加将复合薄膜的热分解温度和接触角分别提升至303 ℃和120°。复合薄膜的红外发射率随Sn_0.84Sb_0.08Sm_0.08O₂添加量的增加而逐渐减小，当添加量为9%时，样品在3~5和8~14 μm波长区间的红外发射率分别为0.576和0.652。本研究制备的复合薄膜具有良好的疏水性、热稳定性、柔韧性和红外隐身性能，为轻质红外隐身材料的研究提供了实验依据，在红外隐身领域具有一定的应用前景。

Abstract:

The self-made hollow porous micro/nano-fiber structure Sn_0.84Sb_0.08Sm_0.08O₂ and thermoplastic polyurethane (TPU) were used as raw materials to prepare the Sn_0.84Sb_0.08Sm_0.08O₂/TPU (the addition content of Sn_0.84Sb_0.08Sm_0.08O₂ is 0wt%, 3wt%, 6wt%, and 9wt%) composite micro/nano-fiber films by electrostatic spinning method. Results show that the microstructures of composite films all present a fibrous 3D network structure. The tensile strength and elongation of the composite film are increased firstly and then decreased with increasing the addition content. When the addition amount is 6wt%, the tensile strength and elongation of the film are 2.68 MPa and 573%, which are 1.5 and 8.3 times higher than those of TPU film, respectively. The addition of Sn_0.84Sb_0.08Sm_0.08O₂ increases the thermal decomposition temperature and contact angle of the composite films to 303 °C and 120°, respectively. The infrared emissivity of the composite film is decreased with increasing the filler content. When the addition content is 9wt%, the infrared emissivity of the specimens at wavelength of 3–5 and 8–14 μm is 0.576 and 0.652, respectively. This composite film has good hydrophobicity, thermal stability, flexibility, and infrared stealth performance, providing experimental basis for the research of lightweight infrared stealth materials and showing certain application potential in the infrared stealth field.