Fe掺BaZrS3磁性半导体的制备与研究

Preparation and Study of Fe-Doped BaZrS3 Magnetic Semiconductors

摘要:

硫族钙钛矿是一类新兴的半导体功能材料,具有独特的电子结构与光电性质。本文采用溶胶-凝胶法结合化学气相反应的方法制备了硫族钙钛矿BaZrS₃纳米结构,并且借助掺杂的方法获得了BaZr_1-xFe_xS₃磁性半导体,并对其结构和光、磁学等性能进行研究。结果表明,对氧化物钙钛矿BaZrO₃进行硫化处理,即用同族的S元素替代O元素,样品仍然可以表现出钙钛矿结构,而且硫化处理可以起到降低带隙宽度的作用。同时用具有局域磁矩的3d过渡族金属元素,如Fe进行钙钛矿B位阳离子掺杂,通过控制Fe的掺杂量同样可以系统地调控样品的带隙宽度,而且对于BaZr_99.7Fe_0.03S₃和BaZr_99.5Fe_0.05S₃样品表现出了室温铁磁性。

Abstract:

Chalcogenide perovskites are an emerging class of functional semiconductor materials with unique electronic structures and optoelectronic properties. In this paper, chalcogenide perovskite BaZrS₃ nanostructures were prepared by a sol-gel method combined with chemical vapor reaction. And BaZr_1-xFe_xS₃ magnetic semiconductor was obtained by doping method. The structure, optical and magnetic properties were studied. The results show that the oxide perovskite BaZrO₃ can still exhibit a perovskite structure after vulcanization, that is, replacing O element with S element. And the sulfide treatment can reduce the band gap width of the sample. At the same time, 3d transition metal elements with localized magnetic moment, such as Fe, are used for cation doping of perovskite B site. The band gap width of the samples can also be systematically regulated by controlling the doping amount of Fe. In particular, the BaZr_99.7Fe_0.03S₃ and BaZr_99.5Fe_0.05S₃ exhibit room temperature ferromagnetism.