真空蒸馏-区域熔炼联合法制备7N高纯铟

Preparation of 7N High-Purity Indium by Vacuum Distillation- Zone Refining Combination

摘要:

高纯铟广泛应用于航空航天、电子、医疗、能源和国防领域。铟的纯度和杂质含量对这些应用有着重要影响。采用真空蒸馏和区域熔炼相结合的方法制备了高纯铟。结果表明，杂质Sn和Bi的去除率超过95%，杂质Sb的平均去除率接近95%，Si、Fe、Ni和Pb的去除率超过85%。最终，杂质Sn和Sb分别降低至2.0和4.1 μg/kg，Fe、Ni、Pb和Bi等多数杂质含量均降低至仪器检测限以下。总体杂质去除率为90.9%，铟纯度达到7N9。

Abstract:

High-purity indium finds extensive application in the aerospace, electronics, medical, energy, and national defense sectors. Its purity and impurity contents significantly influence its performance in these applications. High-purity indium was prepared by combining zone refining with vacuum distillation. Results show that the average removal efficiency of impurity Sb can approach 95%, while the removal efficiency of impurities Sn and Bi can reach over 95%, and the removal efficiency of Si, Fe, Ni, and Pb can reach over 85%. Ultimately, the amount of Sn and Sb impurities is reduced to 2.0 and 4.1 μg/kg, respectively, and that of most impurities, including Fe, Ni, Pb, and Bi, is reduced to levels below the instrumental detection limit. The average impurity removal efficiency is 90.9%, and the indium purity reaches 7N9.