ITO靶刻蚀时间对沉积ITO薄膜光电性能的影响

Effect of Etching Time of ITO Targets on Electrical and Optical Properties of Deposited ITO Films

摘要:

在磁控溅射过程中，通过观察在2~50 h的刻蚀时间下制备的ITO薄膜的表面形貌，研究了在磁控溅射过程中ITO靶表面的黑色凸起的形成过程，并探讨了刻蚀时间对沉积ITO薄膜的光电性能的影响。结果表明，随着刻蚀时间的增长，ITO靶材表面的In和Sn分布发生变化，导致ITO膜不均匀。薄膜的电学和光学性能因结节的形成而显著退化。而当刻蚀时间在40 h以下时，ITO薄膜的光电性能变化不大。然而，当蚀刻时间继续延长，薄膜的光电性能会迅速恶化。

Abstract:

The formation process of nodules (small black projections) on the surface of tin-doped In₂O₃ (ITO) targets during magnetron sputtering was studied by observing the surface morphologies of ITO films prepared within etching time of 2?50 h. The effects of etching time on the electrical and optical properties of the deposited ITO films were explored. Results show that the distribution of In and Sn on the surfaces of the ITO targets changes with the etching time, resulting in uneven ITO films. The electrical and optical properties of the films are degraded significantly due to nodule formation. The photoelectric properties of the ITO films are not affected significantly by etching time within 40 h. However, a rapid deterioration is recorded when longer etching time is applied.