+Advanced Search
High Temperature Oxidation Kinetics of Reaction Bonded Silicon Carbide
DOI:
Author:
Affiliation:

Clc Number:

TQ174.758

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    Reference
    Related
    Cited by
Get Citation

[Huang Qingwei, Gao Jiqiang, Jin Zhihao. High Temperature Oxidation Kinetics of Reaction Bonded Silicon Carbide[J]. Rare Metal Materials and Engineering,2000,(1):32~34.]
DOI:[doi]

Copy
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:
  • Revised:
  • Adopted:
  • Online:
  • Published: