Preparation of Iridium Films by MOCVD and Deposition Effectiveness Analysis

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Preparation of Iridium Films by MOCVD and Deposition Effectiveness Analysis
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                        Hua Yunfeng,Chen Zhaofeng,Zhang Litong,Cheng LaifeiHua Yunfeng,Chen Zhaofeng,Zhang Litong,Cheng Laifei

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Key words:iridium,metalorganic chemical vapor deposition,precursor,substrates

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[14]X. Li,A. M. Jones,S. D. Roh,D. A. Turnbull,S. G. Bishop,J. J. Coleman.Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition[J].Journal of Electronic Materials,1997,26(3):306-310.

[15]M. Chunggaze,M. Azad Malik,P. O'Brien.Deposition of cadmium sulphide thin films from the single-source precursor bis(diethylmonothiocarbamato)cadmium(II) by low-pressure metalorganic chemical vapour deposition[J].Advanced functional materials,1997,7(6):311-316.

[16]LIU Cheng-you,NING Dan,B.P.Zhang,Y.Segawa.Nonlinear optical properties of ZnO films deposited by metalorganic chemical vapor deposition (MOCVD) technique[J].Optics and Precision Engineering,2005,13(3):265-271.

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[18]K. G. Fertitta,A. L. Holmes,F. J. Ciuba,R. D. Dupuis,F. A. Ponce.High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition[J].Journal of Electronic Materials,1995,24(4):257-261.

[19]Yongjo Pakk,Dimitris Pavlidis.Mass spectroscopy study of GaN metalorganic chemical vapor deposition[J].Journal of Electronic Materials,1996,25(9):1554-1560.

[20]Yan Xin,Zhang Qiuyu,Fan Xiaodong.A New Precursor for Metal Organic Chemical Vapor Deposition of Iridium Thin Films[J].Rare Metal Materials and Engineering,2006,35(7):1129-1131.

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[Hua Yunfeng, Chen Zhaofeng, Zhang Litong, Cheng Laifei. Preparation of Iridium Films by MOCVD and Deposition Effectiveness Analysis[J]. Rare Metal Materials and Engineering,2005,34(1):139~142.]
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