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Photoluminescence Properties of C~+ Implanted Epitaxial Si Annealed in Hydrogen Ambience
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TN304.13

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    Abstract:

    Blue luminescence at about 431nm is obtained from epitaxial silicon after sequential processing of C+ implantation, annealing in hydrogen ambience and chemical etching. With the increase of chemical etching, the blue peak was enhanced at first, decreased then and substituted by a red peak at last. C=O compounds induced during C+ implantation are embedded in the surface of nanometer Si formed during annealing, and nanometer silicon with embedded structure is formed at last, which contributes to the blue emission.

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[Wang Qiang, Li Yuguo, Shi Liwei, Xue Chengshan. Photoluminescence Properties of C~+ Implanted Epitaxial Si Annealed in Hydrogen Ambience[J]. Rare Metal Materials and Engineering,2005,34(2):256~258.]
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  • Received:
  • Revised:June 13,2003
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