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Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3 /Nb Films
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National Natural Science Foundation of China(Grant No90301002) and Supported by the Key Research Program of the National Natural Science Foundation of China(Grant No 90201025)

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    Abstract:

    Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube. The as-prepared nanowires are confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Transmission electron microscopy (TEM) shows that the GaN nanowires are straight and smooth, and possess the diameters of about 50 nm and lengths up to several microns. When excited by 325 nm helium-cadmium (He-Cd) laser light at room temperature, the GaN nanowires only have a strong ultraviolet luminescence peak located at 367 nm, owing to GaN band-edge emission. Finally, the growth mechanism of GaN nanowires is discussed briefly.

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[Zhuang Huizhao, Li Baoli, Wang Dexiao, Shen Jiabing, Zhang Shiying, Xue Chengshan. Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3 /Nb Films[J]. Rare Metal Materials and Engineering,2009,38(4):565~569.]
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  • Received:April 10,2008
  • Revised:June 07,2008
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