Effect of Sulfur Partial Pressure on Properties of CuInS2 Absorber Films

Abstract:

CuInS2 (CIS) films were prepared by electrodepositing-sulfurization at the different partial pressures of sulfur r(r=Sn/[N2+Sn]). Their surface morphologies, crystalline structure, electrical and optical properties were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall system and ultraviolet-visible (UV-VIS) spectraphotometers, respectively. The results show that the crystalline quality is improved with increasing of r. It is found that the CuInS2 film sulfurized at r=1/2 with the fairly large grain size of about 1 μm has (112) preferred orientation, the carrier concentration is 5.6×1016 cm-3, the optical band gap is about 1.53 eV

Key words:CuInS2 thin film; sulfurization method; sulfur partial pressure; microstructure