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Sb/As Exchange at the Interface of Heterostructures
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    Abstract:

    High quality GaAs/GaAsSb superlattices were grown by molecular beam epitaxy (MBE) and the Sb/As exchange action was characterized by high resolution X-ray diffraction (HRXRD). The Sb desorption from the GaAs surface increases with the increase of substrate temperature, causing a net decrease in Sb composition. The Sb flux and the Sb soak time have no obvious effects on the Sb/As exchange. It is shown that the exchange action was restrained on the surface and the Sb diffusion in GaAs was limited

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[Qiu Yongxin, Li Meicheng, Xiong Min, Zhang Baoshun, Liu Guojun, Zhao Liancheng. Sb/As Exchange at the Interface of Heterostructures[J]. Rare Metal Materials and Engineering,2009,38(11):1983~1986.]
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History
  • Received:November 12,2008
  • Revised:August 19,2009
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