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Study of Surfactant in the Chemical Mechanical Polishing of Osmium
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School of Chem. & Chem. Eng., Anhui University of Technology,School of Chem. & Chem. Eng., Anhui University of Technology,School of Chem. & Chem. Eng., Anhui University of Technology,School of Chem. & Chem. Eng., Anhui University of Technology,School of Chem. & Chem. Eng., Anhui University of Technology

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TG175.3

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    Abstract:

    Osmium surface was planarized by chemical mechanical polishing (CMP), the effect of different surfactants on the results of polishing was investigated via a series of home-made slurries. The influence of surfactants on the process of CMP was studied by electrochemical dynamics and X-ray photoelectron spectroscopy, the morphology of Os surface was characterized by atomic force microscopy (AFM). The results are following: when adding TMAOH in slurry, the MRR of Os decreases from 5.8 nm/min to 2.9 nm/min and the surface roughness (Ra) increases from 2.1 nm to 4.8 nm; although PEG400, SHMP and SDS can increase the MRR, they cannot improve the surface quality; SLS and CTAB can increase the MRR and decrease the surface roughness; especially, CTAB can increase MRR to 14.6nm/min and decrease surface roughness (Ra) to 0.57 nm.

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[Bai Linshan, Liang Miao, Chu Xiangfeng, Dong Yongping, Zhang Wangbing. Study of Surfactant in the Chemical Mechanical Polishing of Osmium[J]. Rare Metal Materials and Engineering,2016,45(3):771~775.]
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History
  • Received:April 14,2014
  • Revised:June 09,2014
  • Adopted:October 30,2014
  • Online: July 07,2016
  • Published: