The study of epitaxial growth behavior of CSD-La3TaO7

Abstract:

Coated conductors become the significant materials that provide the potential to support high current for electric utility and high magnetic field applications at 77 K. In RABiTS/CSD routs with low-cost, the epitaxial growth of buffer layer on textured metallic substrate is an essential precondition for the biaxial texture growth of superconducting layer and its high current carrying capacity. Therefore, the study of the epitaxial growth behavior of buffer layer becomes important. In this paper, we have explored the influence of the thermal decomposition behavior of LTO-gels and the heat-treatment process route on the texture and morphology evolution of buffer layer. LTO buffer layer with good c-axis texture and smooth surface could be obtained by choosing the suitable LTO precursor solution and adjusting a rapid elevated temperature processing methods.