Abstract:In the process of heat treatment, the electric field has a certain effect on the migration of ions inside materials, thus affecting the organization and performance of the material. In this paper, diffusion bonding SiC to Ti was carried out by applying voltage. Study shows that, when the metal and ceramic connect the positive and negative of the electric field respectively, the electric field will promote the increase of the thickness of interface diffusion layer, but reversed connection can weaken the promotion of interface diffusion layer thickening significantly. In the process of SiC/Ti interface diffusion reaction, new phase Ti5Si3 and TiC generate at the interface, and the interface structure from SiC to Ti is SiC/TiC/(Ti5Si3 TiC)/Ti. Mechanical properties testing results show that the shear strength of the joint at 1000℃/2h/7.5MPa is 66.4MPa, but the shear strength of the joint at 950℃/1.5h/7.5MPa/400V is 69.6MPa, so applying voltage during the bonding process can keep the shear strength and, as the same time, improve the efficiency of the bonding.