Influence of heat-treatment parameters on the epitaxial growth of LZO film deposited by CSD process

Abstract:

Influences of four parameters of CSD process to deposit LZO films on the epitaxial growth of the LZO films were studied. The results indicated that the intensity of (400) peak increased with increasing the heating temperature, heating time and heating rate. The results about the influence of oxygen partial pressure showed that the texture of LZO film was very sensitive to oxygen partial pressure during heat-treatment, and the influence of oxygen partial pressure on the texture of LZO film was more important than that of other parameters in order to obtain a cube-textured LZO film. The influence of heating temperature, heating time, and heating rate could be explained by the classic nucleation and growth theory. However, oxygen partial pressure had a dual role, one was to decrease the content of residual carbon in the film, which was good for the growth of LZO grains, and the other was to weaken the inhibition of the spontaneous nucleation and growth of LZO grains due to decreaseing the content of residual carbon in the film, and finally the texture of LZO film was not a cube texture. So controlling or modifying the oxygen partial pressure at the different stages of heat-treatment may be a key to improve the kinetic of LZO grains and not to influence the epitaxial growth of LZO film.

Key words:La2Zr2O7 (LZO) buffer layer; Chemical solution deposition; epitaxial growth