Research on the Stucture and Conductivity of Cu (In0.7Ga0.3) Se2 Target Processed by Spark Plasma Sintering (SPS)

Abstract:

The CIGS quaternary alloy target was prepared through Spark Plasma Sintering(SPS) using Cu(In0.7Ga0.3)Se2 single-phase powder which was compounded under 650℃. The influence of sintering technological parameter ,such as sintering temperature, holding time and sintering pressure on performance of target was studied. The results showed that the target was a Cu(In0.7Ga0.3)Se2 single-phase when sintering temperature was above 500℃, and the grain size was increased , both of density and resisitivity was a linear increase with the sintering temperature increasing. The grain size, density and resistivity were also increasing with holding time. However, the density was increased, the resistivity was decreased with the sintering pressure increasing. In conclusion, the resisitivity is 50Ω?cm, density is above 98%, when sintering temperature is 600℃，sintering pressure is 30 MPa，holding time is 5mins.