Effects of Mn Doping on Ferroelectric Properties of 0.7BiFeO3-0.3PbTiO3 Thin Films

Abstract:

0.7BiFeO3-0.3PbTiO3 thin films with 0%, 1%, 5%, 10 % Mn doping (BFMPT7030/x, x=0, 0.01, 0.05, 0.1) were prepared on LaNiO3/SiO2/Si substrates by a sol-gel process. XRD results indicate that the films are completely crystallized and present highly (100) preferred orientation. Crystalline structure analyses of the thin films reveal that BFMPT7030/0.05 thin film has the smallest grain size (258 nm) and the smallest cell volume (61.25×10-3 nm3). SEM results show that the crystalline grains are fully grown up and the grain size is between 150~300 nm. The BFMPT7030 thin film with 5% Mn doping demonstrates good ferroelectric properties and a saturated hysteresis loop is observed. The leakage current tests show that with increasing of Mn content, the increasing tendency of the leakage current becomes slow as electric field increases.

Key words:sol-gel; BiFeO3-PbTiO3; thin Film; Mn doping