- ZHANG Liwen
ZHANG Liwen
School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing
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Search for this author on this site - SONG Bo
SONG Bo
School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing
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Search for this author on this site - HAN Fei
School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing,School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing,
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Abstract: The different different zirconium content in Pb0.88La0.08(ZrxTi1-x)O3（x=0.30，055，0.80）(abbreviated as PLZT) thick films with 1μm thickness were successfully fabricated on LaNiO3/Si(100) by the sol-gel method. The effect of different zirconium content of the PLZT anti-ferroelectric thick films on the dielectric and energy-storage properties were studied scientifically. The results show that the structure of the PLZT anti-ferroelectric thick films was not affected, after zirconium content performance enhanced significantly, when ratio is (8/80/20), the energy-storage density (W) and energy-storage efficiency (η) were increased, and the maximum W=23.8J/cm3 and corresponding η=60% were obtained from the PLZT(8/80/20) thick films at 1400 kV/cm.
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[ZHANG Liwen, SONG Bo, HAN Fei. The Structures and Energy-storage Properties of PLZT Anti-ferroelectric Thick Films with different zirconium content[J]. Rare Metal Materials and Engineering,2016,45(10):2653~2658.]
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History
- Received:April 12,2015
- Revised:August 11,2015
- Adopted:September 07,2015
- Online: November 10,2016