Synthesis of In(Sn)-O and Sn(In)(Sb)-O Systems Nanoparticles Using DC Arc Plasma Method

Abstract:

A new DC arc plasma concept to produce metal oxides nanoparticles by metal melting, blasting or gasification processes is presented. It is exemplified for the preparation of SnO₂, In₂O₃ single phases nanoparticles and the base of SnO₂, In₂O₃ composite nanoparticles such as In₂O₃:Sn (ITO), SnO₂:Sb (ATO), and SnO₂:In:Sb (IATO). X-ray diffraction (XRD) indicated that the doped SnO₂ and In₂O₃ are in single phase with no other secondary phases. Transmission electron microscopy (TEM) showed the particle size ranged from 20 nm to 50 nm for the prepared single phases of nanoparticles with good dispersion. The prepared ITO and ATO nanoparticles were utilized in ITO target and ATO electrode, and their density and electrical properties were tested. The prepared ITO target and ATO electrode show high density and low resistivity and film-forming effect is good for ITO target, implying that the ITO and ATO nanoparticles prepared by DC arc plasma can be applied in the field of flat panel displays and conductive electrodes.