Transport Properties and Mechanisms Modulated by Doping Ratio of Ce in La1-xCexMnO3 Electronic-doped Films

Abstract:

In this letter, we perform the experimental studies on La_1-xCe_xMnO₃ to investigate transport properties and field-induced transport mechanisms in electronic doped perovskite films. La_1-xCe_xMnO₃films exhibit significant metal-insulator transition, which can be modulated by the doping ratio of Ce. Resistance-temperature curves indicate that the magnetic domains and electron-electron scattering mainly contribute to the transport mechanism in the low temperature region, while the hopping conduction of small polaron becomes the dominating factor at the high temperatures. Laser irradiation was found to induce the shift of metal-insulator transition temperature towards the lower temperature region due to the coexistence of ferromagnetic (FM) metallic phase and paramagnetic (PM) insulating phase in La_1-xCe_xMnO₃ films. The higher laser intensity gives rise to more significant change in resistance. Furthermore, magnetoresistance effect can be affected by different doping ratios of Ce in La_1-xCe_xMnO₃ films Because of the MIT transition. Our findings are expected to drive the development and application for the new energy transducer devices.