+Advanced Search
Home > Archive>Volume 47, Issue S1, 2018 >91-94
PDF HTML XML Export Cite reminder
Influence of Argon Flow on the Optic-electronic Performance of Aluminum Doped Zinc Oxide Thin Films
Author:
Affiliation:

Science and Technology on Surface Physics and Chemistry Laboratory,Science and Technology on Surface Physics and Chemistry Laboratory,Science and Technology on Surface Physics and Chemistry Laboratory,State Key Laboratory of New Ceramics Fine Processing,School of Materials Science and Engineering,Tsinghua University,State Key Laboratory of New Ceramics Fine Processing,School of Materials Science and Engineering,Tsinghua University,Science and Technology on Surface Physics and Chemistry Laboratory

Clc Number:

TK514

  • Article
    • | |
  • Metrics
    • |
  • Reference [11]
    • |
  • Related
    • | | |
  • Comments
    Abstract:

    Aluminum doped zinc oxide (AZO) thin films were deposited by the radio frequency magnetron sputtering with double target, used as the low resistance window layers of Cu2ZnSnS4 (CZTS) solar cells. The influences of Ar flow on the optic-electronic performances of AZO thin films were investigated with 60W sputtering power and 30 mins sputtering time, such as the crystallinity, surface morphology, transmittance, carrier concentration and resistivity. It is showed that, 22 sccm is the saturated Ar flow. Under this flow, AZO grains are bigger, the crystallinity of films are better, the carrier concentration is higher, while the resistivity is lower. The average transmittance of the AZO film is 87.2% range from 400 nm to 1100 nm wavelength.

    Reference
    [1] Wang W, Winkler MT, Gunawan O et al. Adv. Energy Mater.[J], 2014,4(7):1301465
    [2] Yang Ping(杨萍), Chen Fei(陈斐), Shen Qiang(沈强) et al. Rare Metal Materials and Engineering[J], 2015,44(S1):56~59
    [3] Korala L, McGoffin JT, Prieto AL. ACS Appl. Mater. Interfaces[J], 2016,8(7):4911~4917
    [4] Sun K, Su Z, Yan C et al. RSC Adv.[J], 2014,4(34):17703~17708
    [5] Repins I, Beall C, Vora N et al. Sol. Energ. Mat. Sol. C.[J], 2012,101:154~159
    [6] Tao J, Chen L, Cao H et al. J. Mater. Chem. A[J], 2016,4(10):3798~3805
    [7] Mussard M, Gueno A, Nydal OJ. Sol. Energy[J], 2013,98:375~383
    [8] Rovelli L, Tilley SD, Sivula K. ACS Appl. Mater. Interfaces[J], 2013,5(16):8018~8024
    [9] Agawane GL, Kamble AS, Vanalakar SA et al. Mater. Lett.[J], 2015,158:58~61
    [10] Pang CY, Dhakal TP, Emrani A et al. 2014 IEEE 40th Photovoltaic Specialists Conference[C], Denver, CO, USA: IEEE Press, 2014: 0160-8371
    [11] Agashe C, Kluth O, Hüpkes J et al. J. Appl. Phys.[J], 2004,95(4): 1911~1917
    Related
    Cited by
    Comments
    Comments
    分享到微博
    Submit
Get Citation

[Pan Yang, Xiaochong Zhao, Lijun Yang, Youchen Gu, Hong Lin, Lai Xinchun. Influence of Argon Flow on the Optic-electronic Performance of Aluminum Doped Zinc Oxide Thin Films[J]. Rare Metal Materials and Engineering,2018,47(S1):91~94.]
DOI：[doi]

Copy
Article Metrics
  • Abstract:1027
  • PDF: 1253
  • HTML: 135
  • Cited by: 0
History
  • Received:June 01,2017
  • Revised:June 01,2017
  • Adopted:January 29,2018
  • Online: October 22,2018

Total visitors：12693604

Address：96 weiyanglu, xi'an,Shaanxi, P.R.China Postcode：710016 ServiceTel：0086-26-86231117

E-mail：rmme@c-nin.com

Copyright:Rare Metal Materials and Engineering ® 2025 All Rights Reserved Support:Beijing E-Tiller Technology Development Co., Ltd. ICP: