- YOU Zengyu
YOU Zengyu
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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Search for this author on this site - SU Yuxuan
SU Yuxuan
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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Search for this author on this site - WANG Hui
WANG Hui
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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Search for this author on this site - YU Yang
YU Yang
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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Search for this author on this site - QIN Tian
QIN Tian
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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Search for this author on this site - SHEN Qianhong
SHEN Qianhong
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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Search for this author on this site - YANG Hui
YANG Hui
State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
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State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China,State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China,State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China,State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China,State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China,State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China,State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou PR China
The National Key Research and Development Program of China (No. 2016YFB0701100)
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A simple and template-free synthesis method was developed to fabricate porous graphitic carbon nitride (g-C3N4) through a hydrothermal process in the presence of ammonium hydroxide. The effect of ammonium hydroxide on the structure of porous g-C3N4 was characterized in details by XRD, FT-IR, SEM and TEM. The photocatalytic activity of porous g-C3N4 was evaluated by the degradation of methylene blue (MB) under visible light irradiation. The results show that as-prepared porous g-C3N4 exhibits a porous nanostructure composed of 2D nanosheets and interconnected pores. The photocatalytic activity of porous g-C3N4 is enhanced, owing to the synergistic effect of more reaction sites and good separation efficiency of photo-generated carriers.
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[YOU Zengyu, SU Yuxuan, WANG Hui, YU Yang, QIN Tian, SHEN Qianhong, YANG Hui. Preparation of porous graphitic carbon nitride with en-hanced visible-light photocatalytic activities[J]. Rare Metal Materials and Engineering,2018,47(S2):204~208.]
DOI：[doi]
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History
- Received:November 28,2017
- Revised:November 28,2017
- Adopted:February 01,2018
- Online: November 01,2018