Effect of Graphitization Degree of Crucible on SiC Single Crystal Growth Process
DOI:
Author:
Affiliation:
Clc Number:
O613.71 O613.72
Fund Project:
Article
|
Figures
|
Metrics
|
Reference
|
Related
|
Cited by
|
Materials
|
Comments
Abstract:
Reference
Related
Cited by
Get Citation
[Liu Junlin, Gao Jiqiang, Cheng Jikuan, Yang Jianfeng, Qiao Guanjun. Effect of Graphitization Degree of Crucible on SiC Single Crystal Growth Process[J]. Rare Metal Materials and Engineering,2005,34(12):1944~1947.] DOI:[doi]