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Effect of Graphitization Degree of Crucible on SiC Single Crystal Growth Process
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O613.71 O613.72

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[Liu Junlin, Gao Jiqiang, Cheng Jikuan, Yang Jianfeng, Qiao Guanjun. Effect of Graphitization Degree of Crucible on SiC Single Crystal Growth Process[J]. Rare Metal Materials and Engineering,2005,34(12):1944~1947.]
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  • Received:March 14,2005
  • Revised:March 14,2005
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