Abstract:Effect of Fe and C doping via ion implantation on the lattice distortion of He ion implanted Al surface was studied by X-ray diffraction (XRD). The results show that the pre-doped Fe and C play an important part in the lattice distortion of Al surface, and the influence extent depends on the doping fluence. With the increase of the fluence of pre-doped Fe, the lattice distortion of Al surface decreases first and then increases, indicating that Fe doping of small fluence is beneficial for the reduction of lattice distortion of He implanted Al. C doping can further reduce the lattice distortion caused by the earlier Fe doping, and the reduction extent increases with the fluence of doped C increasing. It is concluded that small fluence of Fe and high fluence of C co-doping can effectively reduce the lattice distortion of the He implanted Al surface