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Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering
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Northwest University

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基金号No. 61405159

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    Abstract:

    Being considered In2O3, Ga2O3, Mg as In, Ga and Mg sources, the InxGa1-xN and Mg doped InxGa1-xN thin films were deposited on Si substrate by magnetron sputtering. The In component in the film decreases with the doping of Mg, because Mg doped suppresses the formation of In-N bond and increases the chance of Ga into the film. The EDS analysis of Mg doped InxGa1-xN film as-prepared show that 1.4 % of Mg content was successfully doped into the InxGa1-xN film. The electrical performances of In0.84Ga0.16N and Mg doped In0.1Ga0.9N thin films reveal that the type conduction of InxGa1-xN thin films is transformed from n-type to p-type conduction, and the hole concentration and mobility of Mg doped In0.1Ga0.9N thin film are found to be 2.65×1018 cm?3 and 3.9 cm2/Vs, respectively.

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[wangxuewen, wuzhaoke, gaohaibo, zhaichunxue,张志勇,helin. Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering[J]. Rare Metal Materials and Engineering,2019,48(4):1074~1078.]
DOI:10.12442/j. issn.1002-185X.20171015

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History
  • Received:November 09,2017
  • Revised:December 29,2017
  • Adopted:March 12,2018
  • Online: May 13,2019
  • Published: