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Study on preparation of silicon doped carbon composite target and the growth form of sputtering film layer
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Affiliation:

GRINM Resources and Environment Tech.Co.,Ltd,Beijing,10088

Clc Number:

TB321;TB44

Fund Project:

Youth Fund projects of GRINM GROUP CORPRATION LIMITED

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    Abstract:

    Using carbon, silicon carbide and silicon as raw material, the composite raw material powder was prepared by pretreatment process and C/Si 80/20at% target via hot pressing. The target material was then sputtered on different substrates. The micromorphology was analyzed by SEM; the resistivity was measured by four probes; the crystal structure was examined by XRD combined with Raman spectroscopy. The results yielded are: (1) Uniformly distributed C / Si powder of Si elements was obtained after consistent ball milling for 48 hours. While the powder is vacuum heat treated at 1900 ℃, liquid silicon and solid carbon generate equiaxed 3C-SiC through inter-diffusion. (2) Whenβ-SiC powders with different size were vacuum heat-treated at 1900 ℃, there was a significant disparity between neck growth rate and crystal structure transformation. Under high temperature, the nano-β-SiC powder had higher vapor pressure and its neck growth rate was relatively faster. Subsequently, pure 3C-SiC microparticles with higher sphericity were acquired after evaporation-coagulation and recrystallization. (3) Using C / Si / SiC 70/10/10 at% powder as raw materials and through ball milling /high-temperature vacuum heat treatment as pretreatment methods, C / Si 80/20 at% target was hot-pressed. The results show that: In comparison with the C / SiC 60/20 at% binary component system, the target prepared by the ternary component pretreatment powder has better uniformity, the average resistivity is 3.9×10-3 ohm · cm and the range is 0.59, the density is 2.34g / cm3, the degree of graphitization is 0.17, the graphite crystals have good integrity. (4) C / Si 80 / 20at% target was magnetron sputtered on glass, silicon wafer and ceramic substrate to deposit diamond-like thin films. The results exhibited that the film on the Si substrate had a longitudinal growth mode and the film particles were less than 20nm; The film layer on glass had a layered growth mode and were tightly bonded; The film on the ceramic substrate, composed of micron-sized particles that were similar to the microstructure of the ceramic matrix.

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[Bai Xue, Liu Yuyang, Wang Xingqi, Gui Tao, Yang Lei, Wang Xingming, Chu Maoyou. Study on preparation of silicon doped carbon composite target and the growth form of sputtering film layer[J]. Rare Metal Materials and Engineering,2020,49(12):4207~4214.]
DOI:10.12442/j. issn.1002-185X.20200291

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History
  • Received:May 03,2020
  • Revised:June 08,2020
  • Adopted:June 09,2020
  • Online: January 13,2021
  • Published: